auf Bestellung 89756 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.65 EUR |
| 10+ | 0.56 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.2 EUR |
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Technische Details PMN42XPEAX Nexperia
Description: MOSFET P-CH 20V 5.7A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V, Power Dissipation (Max): 500mW (Ta), 8.33W (Tc), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote PMN42XPEAX nach Preis ab 0.27 EUR bis 0.83 EUR
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PMN42XPEAX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET P-CH 20V 5.7A 6TSOPPackaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 2695 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMN42XPEAX | Hersteller : NEXPERIA |
PMN42XPEAX SMD P channel transistors |
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PMN42XPEAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 5.7A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |