| Anzahl | Preis |
|---|---|
| 4+ | 0.86 EUR |
| 10+ | 0.68 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.22 EUR |
| 6000+ | 0.2 EUR |
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Technische Details PMN48XP,115 Nexperia
Description: MOSFET P-CH 20V 4.1A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V, Power Dissipation (Max): 530mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V.
Weitere Produktangebote PMN48XP,115 nach Preis ab 0.52 EUR bis 1.32 EUR
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PMN48XP,115 | Nexperia USA Inc. |
 Description: MOSFET P-CH 20V 4.1A 6TSOPInput Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 530mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
auf Bestellung 139 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMN48XP,115 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.1A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 530mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 4.1A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 530mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.32 EUR |
| 22+ | 0.81 EUR |
| 100+ | 0.52 EUR |