| Anzahl | Preis |
|---|---|
| 5+ | 0.62 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.17 EUR |
| 6000+ | 0.15 EUR |
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Technische Details PMN55ENEAX Nexperia
Description: MOSFET N-CH 60V 3.6A 6TSOP, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Power Dissipation (Max): 667mW (Ta), 7.5W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote PMN55ENEAX
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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PMN55ENEAX | Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 3.6A 6TSOPInput Capacitance (Ciss) (Max) @ Vds: 450 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 2.7V @ 250µA Power Dissipation (Max): 667mW (Ta), 7.5W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
PMN55ENEAX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 3.6A 6TSOP Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 2.7V @ 250µA Power Dissipation (Max): 667mW (Ta), 7.5W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMN55ENEAX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3.6A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 667mW (Ta), 7.5W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 3.6A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 667mW (Ta), 7.5W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PMN55ENEAX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3.6A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 667mW (Ta), 7.5W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 3.6A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 667mW (Ta), 7.5W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH