PMN55ENEX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 60V 4.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V
Power Dissipation (Max): 560mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V
auf Bestellung 1055 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 24+ | 0.75 EUR |
| 50+ | 0.55 EUR |
| 100+ | 0.48 EUR |
Produktrezensionen
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Technische Details PMN55ENEX Nexperia USA Inc.
Description: MOSFET N-CH 60V 4.5A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V, Power Dissipation (Max): 560mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V.
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PMN55ENEX | Hersteller : NEXPERIA |
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PMN55ENEX | Hersteller : Nexperia |
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PMN55ENEX | Hersteller : Nexperia |
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PMN55ENEX | Hersteller : Nexperia |
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PMN55ENEX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 4.5A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 10V Power Dissipation (Max): 560mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 6-TSOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 30 V |
Produkt ist nicht verfügbar |
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PMN55ENEX | Hersteller : Nexperia |
MOSFET PMN55ENE/SOT457/SC-74 |
Produkt ist nicht verfügbar |