PMPB09R5TPX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: SMALL SIGNAL MOSFET FOR MOBILE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.5 EUR |
| 6000+ | 0.47 EUR |
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Technische Details PMPB09R5TPX Nexperia USA Inc.
Description: SMALL SIGNAL MOSFET FOR MOBILE, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10.5A, 4.5V, Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN2020M-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V.
Weitere Produktangebote PMPB09R5TPX nach Preis ab 0.46 EUR bis 1.5 EUR
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PMPB09R5TPX | Hersteller : Nexperia |
MOSFET PMPB09R5TP/SOT1220-2/DFN2020M- |
auf Bestellung 2258 Stücke: Lieferzeit 14-28 Tag (e) |
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