Produkte > NEXPERIA USA INC. > PMPB100ENEX
PMPB100ENEX

PMPB100ENEX Nexperia USA Inc.


PMPB100ENE.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2744 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
27+0.67 EUR
50+0.49 EUR
100+0.43 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PMPB100ENEX Nexperia USA Inc.

Description: MOSFET DFN2020MD-6, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.3W (Ta), Rds On (Max) @ Id, Vgs: 72mOhm @ 3.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount.

Weitere Produktangebote PMPB100ENEX

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PMPB100ENEX PMPB100ENEX Hersteller : Nexperia USA Inc. PMPB100ENE.pdf Description: MOSFET DFN2020MD-6
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMPB100ENEX PMPB100ENEX Hersteller : Nexperia PMPB100ENE-2938870.pdf MOSFET PMPB100ENE/SOT1220/SOT1220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH