PMPB10ENZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 10A DFN2020MD-6
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 9A, 10V
Power Dissipation (Max): 1.8W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.19 EUR |
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Technische Details PMPB10ENZ Nexperia USA Inc.
Description: MOSFET N-CH 30V 10A DFN2020MD-6, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMPB10ENZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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PMPB10ENZ | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 10A DFN2020MD-6 Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.8W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PMPB10ENZ | Nexperia |
MOSFETs 30 V, N-channel Trench MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMPB10ENZ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 10A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 10A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMPB10ENZ |
|
Hersteller: Nexperia
MOSFETs 30 V, N-channel Trench MOSFET
MOSFETs 30 V, N-channel Trench MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH