| Anzahl | Preis |
|---|---|
| 3+ | 0.94 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.34 EUR |
| 9000+ | 0.29 EUR |
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Technische Details PMPB12R5EPX Nexperia
Description: PMPB12R5EP - 30 V, P-CHANNEL TRE, Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN2020M-6, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMPB12R5EPX
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PMPB12R5EPX | Hersteller : Nexperia USA Inc. |
 Description: PMPB12R5EP - 30 V, P-CHANNEL TREInput Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN2020M-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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PMPB12R5EPX | Hersteller : Nexperia USA Inc. |
Description: PMPB12R5EP - 30 V, P-CHANNEL TRE Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN2020M-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |