Technische Details PMPB12UNEAX Nexperia
Description: MOSFET N-CH 20V 7.9A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 7.9A, 4.5V, Power Dissipation (Max): 1.6W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote PMPB12UNEAX nach Preis ab 0.23 EUR bis 1.65 EUR
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PMPB12UNEAX | Nexperia |
 Trans MOSFET N-CH 20V 7.9A Automotive AEC-Q101 6-Pin DFN-MD EP T/R |
auf Bestellung 5265 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB12UNEAX | Nexperia |
MOSFETs 20 V, N-channel Trench MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB12UNEAX | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 7.9A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7.9A, 4.5V Power Dissipation (Max): 1.6W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 2058 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMPB12UNEAX |
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Hersteller: Nexperia
Trans MOSFET N-CH 20V 7.9A Automotive AEC-Q101 6-Pin DFN-MD EP T/R
Trans MOSFET N-CH 20V 7.9A Automotive AEC-Q101 6-Pin DFN-MD EP T/R
auf Bestellung 5265 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 701+ | 0.25 EUR |
| 1000+ | 0.24 EUR |
| 3000+ | 0.23 EUR |
| PMPB12UNEAX |
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Hersteller: Nexperia
MOSFETs 20 V, N-channel Trench MOSFET
MOSFETs 20 V, N-channel Trench MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.25 EUR |
| 9000+ | 0.24 EUR |
| PMPB12UNEAX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 7.9A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 7.9A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2058 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.65 EUR |
| 21+ | 1.02 EUR |
| 50+ | 0.75 EUR |
| 100+ | 0.65 EUR |