| Anzahl | Preis |
|---|---|
| 3+ | 1.05 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.26 EUR |
| 3000+ | 0.22 EUR |
| 6000+ | 0.2 EUR |
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Technische Details PMPB13XNEZ Nexperia
Description: PMPB13XNE/SOT1220/SOT1220, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2195 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote PMPB13XNEZ nach Preis ab 0.5 EUR bis 1.27 EUR
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PMPB13XNEZ | Hersteller : Nexperia USA Inc. |
 Description: PMPB13XNE/SOT1220/SOT1220Input Capacitance (Ciss) (Max) @ Vds: 2195 pF @ 15 V Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad |
auf Bestellung 2195 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB13XNEZ | Hersteller : Nexperia USA Inc. |
Description: PMPB13XNE/SOT1220/SOT1220 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2195 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
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