| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.2 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.36 EUR |
| 3000+ | 0.27 EUR |
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Technische Details PMPB14XPX Nexperia
Description: MOSFET DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 8.6A, 4.5V, Power Dissipation (Max): 3.9W (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2303 pF @ 6 V.
Weitere Produktangebote PMPB14XPX nach Preis ab 0.55 EUR bis 1.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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PMPB14XPX | Nexperia USA Inc. |
 Description: MOSFET DFN2020MD-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 8.6A, 4.5V Power Dissipation (Max): 3.9W (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2303 pF @ 6 V |
auf Bestellung 78 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMPB14XPX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.6A, 4.5V
Power Dissipation (Max): 3.9W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2303 pF @ 6 V
Description: MOSFET DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.6A, 4.5V
Power Dissipation (Max): 3.9W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2303 pF @ 6 V
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 28+ | 0.76 EUR |
| 50+ | 0.55 EUR |