| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.25 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.36 EUR |
| 6000+ | 0.27 EUR |
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Technische Details PMPB15XPAX Nexperia
Description: MOSFET P-CH 12V 8.2A DFN2020MD-6, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), FET Type: P-Channel, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PMPB15XPAX nach Preis ab 0.64 EUR bis 1.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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PMPB15XPAX | Nexperia USA Inc. |
 Description: MOSFET P-CH 12V 8.2A DFN2020MD-6Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 2368 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMPB15XPAX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 12V 8.2A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 12V 8.2A DFN2020MD-6
Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2368 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.62 EUR |
| 21+ | 1 EUR |
| 50+ | 0.73 EUR |
| 100+ | 0.64 EUR |