| Anzahl | Preis |
|---|---|
| 4+ | 0.72 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.36 EUR |
| 3000+ | 0.3 EUR |
| 6000+ | 0.25 EUR |
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Technische Details PMPB16EPX Nexperia
Description: MOSFET P-CH 30V 7.5A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V, Power Dissipation (Max): 2W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN2020MD-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1418 pF @ 15 V.
Weitere Produktangebote PMPB16EPX
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
PMPB16EPX | Nexperia USA Inc. |
 Description: MOSFET P-CH 30V 7.5A DFN2020MD-6Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1418 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PMPB16EPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A; ESD Kind of package: reel; tape Case: DFN2020MD-6; SOT1220 Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Pulsed drain current: -30A Drain-source voltage: -30V Gate-source voltage: ±25V Drain current: -4.7A Gate charge: 44nC On-state resistance: 34mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PMPB16EPX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 7.5A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1418 pF @ 15 V
Description: MOSFET P-CH 30V 7.5A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1418 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PMPB16EPX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A; ESD
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Gate-source voltage: ±25V
Drain current: -4.7A
Gate charge: 44nC
On-state resistance: 34mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A; ESD
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -30V
Gate-source voltage: ±25V
Drain current: -4.7A
Gate charge: 44nC
On-state resistance: 34mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH