PMPB20EN,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 7.2A DFN2020MD-6
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 39+ | 0.45 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.2 EUR |
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Technische Details PMPB20EN,115 Nexperia USA Inc.
Description: MOSFET N-CH 30V 7.2A DFN2020MD-6, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V.
Weitere Produktangebote PMPB20EN,115
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PMPB20EN,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 7.2A DFN2020MD-6 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V |
Produkt ist nicht verfügbar |
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PMPB20EN,115 | Hersteller : Nexperia |
MOSFETs PMPB20EN/SOT1220/DFN2020MD-6 |
Produkt ist nicht verfügbar |