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Technische Details PMPB20EN,115 Nexperia
Description: MOSFET N-CH 30V 7.2A DFN2020MD-6, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V.
Weitere Produktangebote PMPB20EN,115 nach Preis ab 0.12 EUR bis 1.09 EUR
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PMPB20EN,115 | Nexperia |
 Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB20EN,115 | Nexperia |
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R |
auf Bestellung 7002 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB20EN,115 | Nexperia |
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R |
auf Bestellung 7002 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB20EN,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 7.2A DFN2020MD-6 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 2938 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB20EN,115 | NEXPERIA |
Description: NEXPERIA - PMPB20EN,115 - Leistungs-MOSFET, n-Kanal, 30 V, 10.4 A, 0.0165 ohm, SOT-1220, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.7W Bauform - Transistor: SOT-1220 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0165ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1175 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMPB20EN,115 |
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Hersteller: Nexperia
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.12 EUR |
| PMPB20EN,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R
auf Bestellung 7002 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1309+ | 0.17 EUR |
| PMPB20EN,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R
auf Bestellung 7002 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1309+ | 0.17 EUR |
| PMPB20EN,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 7.2A DFN2020MD-6
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 7.2A DFN2020MD-6
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2938 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 39+ | 0.54 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| PMPB20EN,115 |
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Hersteller: NEXPERIA
Description: NEXPERIA - PMPB20EN,115 - Leistungs-MOSFET, n-Kanal, 30 V, 10.4 A, 0.0165 ohm, SOT-1220, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 10.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 1.7W
Bauform - Transistor: SOT-1220
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0165ohm
SVHC: No SVHC (25-Jun-2025)
Description: NEXPERIA - PMPB20EN,115 - Leistungs-MOSFET, n-Kanal, 30 V, 10.4 A, 0.0165 ohm, SOT-1220, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 10.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 1.7W
Bauform - Transistor: SOT-1220
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0165ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 1175 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 228+ | 1.09 EUR |
| 355+ | 0.65 EUR |
| 625+ | 0.35 EUR |
| 741+ | 0.29 EUR |
| 1000+ | 0.26 EUR |