auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.098 EUR |
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Technische Details PMPB20EN,115 Nexperia
Description: MOSFET N-CH 30V 7.2A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10.
Weitere Produktangebote PMPB20EN,115 nach Preis ab 0.098 EUR bis 0.7 EUR
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PMPB20EN,115 | Hersteller : Nexperia |
 Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB20EN,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R |
auf Bestellung 7002 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB20EN,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R |
auf Bestellung 7002 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB20EN,115 | Hersteller : Nexperia |
MOSFETs PMPB20EN/SOT1220/SOT1220 |
auf Bestellung 4148 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB20EN,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 7.2A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10 |
auf Bestellung 2938 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB20EN,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PMPB20EN,115 - Leistungs-MOSFET, n-Kanal, 30 V, 10.4 A, 0.0165 ohm, SOT-1220, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 10.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.7W Bauform - Transistor: SOT-1220 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0165ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1175 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB20EN,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R |
Produkt ist nicht verfügbar |
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PMPB20EN,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R |
Produkt ist nicht verfügbar |
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PMPB20EN,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R |
Produkt ist nicht verfügbar |
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PMPB20EN,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 7.2A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10 |
Produkt ist nicht verfügbar |