| Anzahl | Preis |
|---|---|
| 3+ | 1.11 EUR |
| 10+ | 0.71 EUR |
| 50+ | 0.61 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.31 EUR |
| 3000+ | 0.24 EUR |
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Technische Details PMPB27EP,115 Nexperia
Description: MOSFET P-CH 30V 6.1A DFN2020MD-6, Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 6.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMPB27EP,115 nach Preis ab 0.48 EUR bis 1.21 EUR
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PMPB27EP,115 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET P-CH 30V 6.1A DFN2020MD-6Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 1335 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB27EP,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 6.1A DFN2020MD-6 Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
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