PMPB40SNA,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 12.9A 6DFN
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Technische Details PMPB40SNA,115 Nexperia USA Inc.
Description: MOSFET N-CH 60V 12.9A 6DFN, Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMPB40SNA,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PMPB40SNA,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 12.9A 6DFN Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DFN2020MD-6 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PMPB40SNA,115 | Nexperia |
MOSFET PMPB40SNA/SOT1220/REEL 7" Q1/T |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMPB40SNA,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 12.9A 6DFN
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 60V 12.9A 6DFN
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 612 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMPB40SNA,115 |
|
Hersteller: Nexperia
MOSFET PMPB40SNA/SOT1220/REEL 7" Q1/T
MOSFET PMPB40SNA/SOT1220/REEL 7" Q1/T
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH