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PMPB50ENEX

PMPB50ENEX Nexperia USA Inc.

PMPB50ENE.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.1A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 15 V
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AnzahlPreis
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26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
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Technische Details PMPB50ENEX Nexperia USA Inc.

Description: MOSFET DFN2020MD-6, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.9W (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 5.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), FET Type: N-Channel.

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PMPB50ENEX PMPB50ENEX Nexperia USA Inc. PMPB50ENE.pdf Description: MOSFET DFN2020MD-6
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
FET Type: N-Channel
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PMPB50ENEX PMPB50ENEX Nexperia PMPB50ENE-1600139.pdf MOSFET 30V N-CH TRENCHMOS
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Im Einkaufswagen  Stück im Wert von  UAH
PMPB50ENEX PMPB50ENE.pdf
PMPB50ENEX
Hersteller: Nexperia USA Inc.
Description: MOSFET DFN2020MD-6
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
FET Type: N-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PMPB50ENEX PMPB50ENE-1600139.pdf
PMPB50ENEX
Hersteller: Nexperia
MOSFET 30V N-CH TRENCHMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH