| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.57 EUR |
| 10+ | 0.5 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.26 EUR |
| 9000+ | 0.25 EUR |
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Technische Details PMPB55ENEAX Nexperia
Description: MOSFET N-CH 60V 4A DFN2020MD-6, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Packaging: Tape & Reel (TR), Supplier Device Package: DFN2020MD-6, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Power Dissipation (Max): 1.65W (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote PMPB55ENEAX nach Preis ab 0.64 EUR bis 1.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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PMPB55ENEAX | Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 4A DFN2020MD-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V Power Dissipation (Max): 1.65W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 3039 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMPB55ENEAX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 4A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 4A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3039 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.59 EUR |
| 22+ | 0.99 EUR |
| 50+ | 0.73 EUR |
| 100+ | 0.64 EUR |