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PMPB95ENEAX

PMPB95ENEAX Nexperia USA Inc.

PMPB95ENEA.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.36 EUR
Mindestbestellmenge: 3000
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Technische Details PMPB95ENEAX Nexperia USA Inc.

Description: MOSFET N-CH 80V 2.8A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V, Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V, Qualification: AEC-Q101.

Weitere Produktangebote PMPB95ENEAX nach Preis ab 0.37 EUR bis 1.1 EUR

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PMPB95ENEAX PMPB95ENEAX Hersteller : Nexperia USA Inc. PMPB95ENEA.pdf Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7052 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
29+ 0.9 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 25
PMPB95ENEAX PMPB95ENEAX Hersteller : Nexperia PMPB95ENEA-1539891.pdf MOSFET PMPB95ENEA/SOT1220/SOT1220
auf Bestellung 4011 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
48+1.1 EUR
55+ 0.96 EUR
100+ 0.72 EUR
500+ 0.56 EUR
1000+ 0.44 EUR
3000+ 0.39 EUR
9000+ 0.37 EUR
Mindestbestellmenge: 48
PMPB95ENEAX PMPB95ENEAX Hersteller : NEXPERIA 4221831392338169pmpb95enea.pdf Trans MOSFET N-CH 80V 2.8A Automotive 6-Pin DFN-MD EP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
PMPB95ENEAX Hersteller : NEXPERIA PMPB95ENEA.pdf PMPB95ENEAX SMD N channel transistors
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