PMPB95ENEAX Nexperia
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.19 EUR |
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Technische Details PMPB95ENEAX Nexperia
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V, Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote PMPB95ENEAX nach Preis ab 0.19 EUR bis 1.09 EUR
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PMPB95ENEAX | Hersteller : Nexperia |
 Trans MOSFET N-CH 80V 2.8A Automotive AEC-Q101 6-Pin DFN-MD EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB95ENEAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB95ENEAX | Hersteller : Nexperia |
MOSFET PMPB95ENEA/SOT1220/SOT1220 |
auf Bestellung 4011 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB95ENEAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6332 Stücke: Lieferzeit 10-14 Tag (e) |
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PMPB95ENEAX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 2.8A Automotive 6-Pin DFN-MD EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB95ENEAX | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 2.8A Automotive AEC-Q101 6-Pin DFN-MD EP T/R |
Produkt ist nicht verfügbar |
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PMPB95ENEAX | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 2.8A Automotive AEC-Q101 6-Pin DFN-MD EP T/R |
Produkt ist nicht verfügbar |
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| PMPB95ENEAX | Hersteller : NEXPERIA |
PMPB95ENEAX SMD N channel transistors |
Produkt ist nicht verfügbar |