PMT200EN,135 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 100V 1.8A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V
Power Dissipation (Max): 800mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 80 V
Description: MOSFET N-CH 100V 1.8A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V
Power Dissipation (Max): 800mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 80 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3806+ | 0.13 EUR |
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Technische Details PMT200EN,135 NXP USA Inc.
Description: MOSFET N-CH 100V 1.8A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V, Power Dissipation (Max): 800mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SC-73, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 80 V.
Weitere Produktangebote PMT200EN,135
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| PMT200EN,135 | Hersteller : NXP |
 Description: NXP - PMT200EN,135 - INTEGRATED PASSIVE FILTERStariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: To Be Advised |
auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMT200EN,135 | Hersteller : NXP USA Inc. |
Description: MOSFET N-CH 100V 1.8A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V Power Dissipation (Max): 800mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-73 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 80 V |
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