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PMV230ENEAR

PMV230ENEAR Nexperia USA Inc.

PMV230ENEA.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 1.5A TO236AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 480mW (Ta), 1.45W (Tc)
Rds On (Max) @ Id, Vgs: 222mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PMV230ENEAR Nexperia USA Inc.

Description: MOSFET N-CH 60V 1.5A TO236AB, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Not For New Designs, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Power Dissipation (Max): 480mW (Ta), 1.45W (Tc), Rds On (Max) @ Id, Vgs: 222mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote PMV230ENEAR nach Preis ab 0.11 EUR bis 0.56 EUR

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PMV230ENEAR PMV230ENEAR Hersteller : Nexperia PMV230ENEA.pdf MOSFETs SOT23 N-CH 60V 1.5A
auf Bestellung 11839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.56 EUR
10+0.32 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.14 EUR
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 6
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PMV230ENEAR PMV230ENEAR Hersteller : Nexperia USA Inc. PMV230ENEA.pdf Description: MOSFET N-CH 60V 1.5A TO236AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 480mW (Ta), 1.45W (Tc)
Rds On (Max) @ Id, Vgs: 222mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 3149 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
52+0.34 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 32
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PMV230ENEAR PMV230ENEAR Hersteller : NEXPERIA PMV230ENEA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 900mA; Idm: 5.9A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.9A
Pulsed drain current: 5.9A
Case: SOT23; TO236AB
On-state resistance: 441mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
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