| Anzahl | Preis |
|---|---|
| 6+ | 0.51 EUR |
| 10+ | 0.37 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
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Technische Details PMV250EPEAR Nexperia
Description: MOSFET P-CH 40V 1.5A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V, Power Dissipation (Max): 480mW (Ta), 6.25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PMV250EPEAR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| PMV250EPEAR | Nexperia |
 P-MOSFET -40В, -1А, 890мВт, SOT23 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
PMV250EPEAR | Nexperia USA Inc. |
Description: MOSFET P-CH 40V 1.5A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V Power Dissipation (Max): 480mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
PMV250EPEAR | Nexperia USA Inc. |
Description: MOSFET P-CH 40V 1.5A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V Power Dissipation (Max): 480mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
PMV250EPEAR | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -1A; 890mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -1A Case: SOT23; TO236AB On-state resistance: 0.4Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 0.89W Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMV250EPEAR |
|
Hersteller: Nexperia
P-MOSFET -40В, -1А, 890мВт, SOT23 Транзистори
P-MOSFET -40В, -1А, 890мВт, SOT23 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMV250EPEAR |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 40V 1.5A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 1.5A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMV250EPEAR |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 40V 1.5A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 1.5A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
Power Dissipation (Max): 480mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PMV250EPEAR |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -1A; 890mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -1A
Case: SOT23; TO236AB
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 0.89W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -1A; 890mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -1A
Case: SOT23; TO236AB
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 0.89W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH