| Anzahl | Preis |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.45 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.14 EUR |
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Technische Details PMV28ENER Nexperia
Description: PMV28ENE/SOT23/TO-236AB, Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 660mW (Ta), 8.3W (Tc).
Weitere Produktangebote PMV28ENER
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| PMV28ENER | Nexperia USA Inc. |
 Description: PMV28ENE/SOT23/TO-236ABTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 660mW (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) FET Type: N-Channel Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PMV28ENER |
|
Hersteller: Nexperia USA Inc.
Description: PMV28ENE/SOT23/TO-236AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 660mW (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: PMV28ENE/SOT23/TO-236AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 660mW (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)