PMV28UNEAR Nexperia
Produktcode: 215734
Hersteller: NexperiaGehäuse: SOT-23
Uds,V: 20 V
Idd,A: 4,7 A
Rds(on), Ohm: 24 mOhm
Ciss, pF/Qg, nC: 490/6,2
Bem.: 20 V, N-channel Trench MOSFET
JHGF: SMD
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PMV28UNEAR | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 4.7A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 4.7A, 4.5V Power Dissipation (Max): 510mW (Ta), 3.9W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V Qualification: AEC-Q101 |
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PMV28UNEAR | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 4.7A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 4.7A, 4.5V Power Dissipation (Max): 510mW (Ta), 3.9W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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PMV28UNEAR | Hersteller : Nexperia |
MOSFETs SOT23 N-CH 20V 4.7A |
Produkt ist nicht verfügbar |
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PMV28UNEAR | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 2.9A; Idm: 19A; ESD Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.9A Pulsed drain current: 19A Case: SOT23; TO236AB Gate-source voltage: ±8V On-state resistance: 48mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
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