PMV30UN,215 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 20V 5.7A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Power Dissipation (Max): 1.9W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details PMV30UN,215 NXP USA Inc.
Description: MOSFET N-CH 20V 5.7A TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Obsolete, Supplier Device Package: SOT-23 (TO-236AB), Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ), Power Dissipation (Max): 1.9W (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMV30UN,215
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PMV30UN,215 | NXP USA Inc. |
Description: MOSFET N-CH 20V 5.7A TO236AB Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Obsolete Supplier Device Package: SOT-23 (TO-236AB) Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ) Power Dissipation (Max): 1.9W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMV30UN,215 |
|
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 20V 5.7A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Power Dissipation (Max): 1.9W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 5.7A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Power Dissipation (Max): 1.9W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH