PMV30XPAR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.9A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
| 6000+ | 0.19 EUR |
| 9000+ | 0.18 EUR |
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Technische Details PMV30XPAR Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.9A TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Part Status: Active, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 610mW (Ta), 8.3W (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Qualification: AEC-Q101, Grade: Automotive, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMV30XPAR nach Preis ab 0.15 EUR bis 0.93 EUR
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PMV30XPAR | Nexperia |
MOSFETs SOT23 P CHAN 20V |
auf Bestellung 6590 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV30XPAR | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 4.9A TO236AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Part Status: Active Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 610mW (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) |
auf Bestellung 12810 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMV30XPAR |
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Hersteller: Nexperia
MOSFETs SOT23 P CHAN 20V
MOSFETs SOT23 P CHAN 20V
auf Bestellung 6590 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 0.65 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.21 EUR |
| 3000+ | 0.15 EUR |
| PMV30XPAR |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.9A TO236AB
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Description: MOSFET P-CH 20V 4.9A TO236AB
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
auf Bestellung 12810 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.93 EUR |
| 31+ | 0.58 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |