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PMV33UPE,215

PMV33UPE,215 Nexperia USA Inc.

PMV33UPE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
6000+0.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PMV33UPE,215 Nexperia USA Inc.

Description: MOSFET P-CH 20V 4.4A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V, Power Dissipation (Max): 490mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 22.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V.

Weitere Produktangebote PMV33UPE,215 nach Preis ab 0.21 EUR bis 0.93 EUR

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PMV33UPE,215 PMV33UPE,215 Hersteller : Nexperia PMV33UPE.pdf MOSFETs PMV33UPE/SOT23/TO-236AB
auf Bestellung 33174 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.89 EUR
10+0.63 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.29 EUR
3000+0.26 EUR
45000+0.21 EUR
Mindestbestellmenge: 4
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PMV33UPE,215 PMV33UPE,215 Hersteller : Nexperia USA Inc. PMV33UPE.pdf Description: MOSFET P-CH 20V 4.4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V
auf Bestellung 53170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
30+0.59 EUR
100+0.39 EUR
500+0.30 EUR
1000+0.28 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
PMV33UPE,215 PMV33UPE,215 Hersteller : NEXPERIA 4381658118128750pmv33upe.pdf Trans MOSFET P-CH 20V 4.4A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH