PMV450ENEAR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 800MA TO236AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 101 pF @ 30 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 323mW (Ta), 554mW (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
| Anzahl | Preis |
|---|---|
| 3000+ | 0.07 EUR |
| 6000+ | 0.063 EUR |
| 9000+ | 0.056 EUR |
| 21000+ | 0.055 EUR |
| 30000+ | 0.053 EUR |
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Technische Details PMV450ENEAR Nexperia USA Inc.
Description: MOSFET N-CH 60V 800MA TO236AB, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 101 pF @ 30 V, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Power Dissipation (Max): 323mW (Ta), 554mW (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 900mA, 10V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3.
Weitere Produktangebote PMV450ENEAR nach Preis ab 0.11 EUR bis 0.44 EUR
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PMV450ENEAR | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 800MA TO236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 900mA, 10V Power Dissipation (Max): 323mW (Ta), 554mW (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 101 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 34380 Stücke: Lieferzeit 10-14 Tag (e) |
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