PMV45EN2VL Nexperia USA Inc.


PMV45EN2.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 5.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.1A, 10V
Power Dissipation (Max): 510mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
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Technische Details PMV45EN2VL Nexperia USA Inc.

Description: MOSFET N-CH 30V 5.1A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 4.1A, 10V, Power Dissipation (Max): 510mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-236AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V.

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PMV45EN2VL PMV45EN2VL Nexperia PMV45EN2.pdf MOSFETs 20 V, 3.5 A P-channel Trench MOSFET
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PMV45EN2VL PMV45EN2.pdf
Hersteller: Nexperia
MOSFETs 20 V, 3.5 A P-channel Trench MOSFET
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Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH