PMV52ENEAR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A TO236AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMV52ENEAR Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A TO236AB, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 630mW (Ta), 5.7W (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V.
Weitere Produktangebote PMV52ENEAR nach Preis ab 0.14 EUR bis 0.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMV52ENEAR | Hersteller : Nexperia |
MOSFETs SOT23 N-CH 30V 3.2A |
auf Bestellung 4614 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
PMV52ENEAR | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 3.2A TO236AB Qualification: AEC-Q101 Grade: Automotive Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Power Dissipation (Max): 630mW (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 4303 Stücke: Lieferzeit 10-14 Tag (e) |
|