PMV60ENEAR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 3A TO236AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 615mW (Ta), 7.5W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| 9000+ | 0.12 EUR |
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Technische Details PMV60ENEAR Nexperia USA Inc.
Description: MOSFET N-CH 40V 3A TO236AB, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 615mW (Ta), 7.5W (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMV60ENEAR nach Preis ab 0.13 EUR bis 0.58 EUR
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PMV60ENEAR | Hersteller : Nexperia |
MOSFETs SOT23 N-CH 40V 3A |
auf Bestellung 35821 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV60ENEAR | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 3A TO236AB Qualification: AEC-Q101 Grade: Automotive Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 615mW (Ta), 7.5W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 12050 Stücke: Lieferzeit 10-14 Tag (e) |
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