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PMV65UN,215

PMV65UN,215 Nexperia


PMV65UN-1111279.pdf Hersteller: Nexperia
MOSFET N-Chan 20V 2A
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Technische Details PMV65UN,215 Nexperia

Description: MOSFET N-CH 20V 2.2A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 76mOhm @ 2A, 4.5V, Power Dissipation (Max): 310mW (Ta), 2.17W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23 (TO-236AB), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 183 pF @ 10 V.

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PMV65UN,215 PMV65UN,215 Hersteller : NXP Semiconductors 269866160230157pmv65un.pdfcidbrand_nxpdatafeed-web_third_party-.pdfcidbrand_nxpd.pdf Trans MOSFET N-CH 20V 2A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
PMV65UN,215 PMV65UN,215 Hersteller : NXP USA Inc. PMV65UN_Rev_Nov_2012.pdf Description: MOSFET N-CH 20V 2.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 2A, 4.5V
Power Dissipation (Max): 310mW (Ta), 2.17W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 183 pF @ 10 V
Produkt ist nicht verfügbar
PMV65UN,215 PMV65UN,215 Hersteller : NXP USA Inc. PMV65UN_Rev_Nov_2012.pdf Description: MOSFET N-CH 20V 2.2A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 2A, 4.5V
Power Dissipation (Max): 310mW (Ta), 2.17W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 183 pF @ 10 V
Produkt ist nicht verfügbar