PMV65UNER Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 2.8A TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 490mW (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
| 6000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMV65UNER Nexperia USA Inc.
Description: MOSFET N-CH 20V 2.8A TO236AB, Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: TO-236AB, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 490mW (Ta), Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMV65UNER nach Preis ab 0.1 EUR bis 0.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMV65UNER | Hersteller : Nexperia |
MOSFETs PMV65UNE/SOT23/TO-236AB |
auf Bestellung 25430 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
PMV65UNER | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 2.8A TO236AB Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 490mW (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 7064 Stücke: Lieferzeit 10-14 Tag (e) |
|