auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.06 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMV75UP,215 Nexperia
Description: MOSFET P-CH 20V 2.5A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 102mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 490mW (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V.
Weitere Produktangebote PMV75UP,215 nach Preis ab 0.06 EUR bis 0.74 EUR
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PMV75UP,215 | Hersteller : Nexperia |
 Trans MOSFET P-CH 20V 3.2A 3-Pin SOT-23 T/R |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMV75UP,215 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 2.5A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 102mOhm @ 2.5A, 4.5V Power Dissipation (Max): 490mW (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV75UP,215 | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 2.5A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 102mOhm @ 2.5A, 4.5V Power Dissipation (Max): 490mW (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V |
auf Bestellung 4269 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV75UP,215 | Hersteller : Nexperia |
MOSFET PMV75UP/SOT23/TO-236AB |
auf Bestellung 48182 Stücke: Lieferzeit 10-14 Tag (e) |
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PMV75UP,215 | Hersteller : NEXPERIA |
Trans MOSFET P-CH 20V 3.2A 3-Pin SOT-23 T/R |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMV75UP,215 | Hersteller : Nexperia |
Trans MOSFET P-CH 20V 3.2A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| PMV75UP,215 | Hersteller : NEXPERIA |
PMV75UP.215 SMD P channel transistors |
Produkt ist nicht verfügbar |