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PMXB350UPEZ

PMXB350UPEZ NXP Semiconductors

PMXB350UPE.pdf
Hersteller: NXP Semiconductors
Description: NEXPERIA PMXB350UPE - 20 V, P-CH
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
auf Bestellung 659217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3703+0.12 EUR
Mindestbestellmenge: 3703
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PMXB350UPEZ NXP Semiconductors

Description: MOSFET P-CH 20V 1.2A DFN1010D-3, Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Part Status: Active, Supplier Device Package: DFN1010D-3, Vgs(th) (Max) @ Id: 950mV @ 250µA, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR), Power Dissipation (Max): 360mW (Ta), 5.68W (Tc), Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), FET Type: P-Channel.

Weitere Produktangebote PMXB350UPEZ nach Preis ab 0.11 EUR bis 0.62 EUR

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PMXB350UPEZ PMXB350UPEZ Hersteller : Nexperia USA Inc. PMXB350UPE.pdf Description: MOSFET P-CH 20V 1.2A DFN1010D-3
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4205 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
52+0.34 EUR
105+0.17 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
PMXB350UPEZ PMXB350UPEZ Hersteller : Nexperia PMXB350UPE.pdf MOSFETs PMXB350UPE/SOT1215/DFN1010D-3
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.62 EUR
10+0.38 EUR
100+0.19 EUR
1000+0.15 EUR
5000+0.13 EUR
10000+0.12 EUR
50000+0.11 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
PMXB350UPEZ PMXB350UPEZ Hersteller : Nexperia USA Inc. PMXB350UPE.pdf Description: MOSFET P-CH 20V 1.2A DFN1010D-3
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
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Im Einkaufswagen  Stück im Wert von  UAH