| Anzahl | Preis |
|---|---|
| 6+ | 0.54 EUR |
| 10+ | 0.38 EUR |
| 100+ | 0.16 EUR |
| 1000+ | 0.099 EUR |
| 2500+ | 0.092 EUR |
| 10000+ | 0.07 EUR |
| 50000+ | 0.063 EUR |
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Technische Details PMZ1200UPEYL Nexperia
Description: MOSFET P-CH 30V 410MA DFN1006-3, Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-883, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 310mW (Ta), 1.67W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 410mA (Ta), FET Type: P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR), Technology: MOSFET (Metal Oxide).
Weitere Produktangebote PMZ1200UPEYL nach Preis ab 0.23 EUR bis 0.58 EUR
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PMZ1200UPEYL | Nexperia USA Inc. |
 Description: MOSFET P-CH 30V 410MA DFN1006-3FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SOT-883 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 310mW (Ta), 1.67W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) |
auf Bestellung 4101 Stücke: Lieferzeit 10-14 Tag (e) |
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| PMZ1200UPEYL |
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Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 410MA DFN1006-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Description: MOSFET P-CH 30V 410MA DFN1006-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 43.2 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
auf Bestellung 4101 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 49+ | 0.36 EUR |
| 69+ | 0.26 EUR |
| 100+ | 0.23 EUR |