PMZ250UN,315 NXP
Hersteller: NXPDescription: NXP - PMZ250UN,315 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 83637 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details PMZ250UN,315 NXP
Description: MOSFET N-CH 20V 2.28A DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.28A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 200mA, 4.5V, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-883, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V.
Weitere Produktangebote PMZ250UN,315
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PMZ250UN,315 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 20V 2.28A 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
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PMZ250UN,315 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 2.28A DFN1006-3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.28A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 200mA, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V |
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PMZ250UN,315 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 20V 2.28A DFN1006-3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.28A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 200mA, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-883 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V |
Produkt ist nicht verfügbar |