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Technische Details PMZ290UNEYL Nexperia
Description: MOSFET N-CH 20V 1A DFN1006-3, Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-883, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 360mW (Ta), 2.7W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMZ290UNEYL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| PMZ290UNEYL | NXP |
 Trans MOSFET N-CH 20V 1A 3-Pin DFN Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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PMZ290UNEYL | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 1A DFN1006-3 Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-883 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
PMZ290UNEYL | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 1A DFN1006-3 Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-883 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMZ290UNEYL |
|
Hersteller: NXP
Trans MOSFET N-CH 20V 1A 3-Pin DFN Транзистори
Trans MOSFET N-CH 20V 1A 3-Pin DFN Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMZ290UNEYL |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 1A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMZ290UNEYL |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 1A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 1A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH