PMZ370UNEZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PMZ370UNE/SOT883/XQFN3
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 4.5 V
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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Technische Details PMZ370UNEZ Nexperia USA Inc.
Description: PMZ370UNE/SOT883/XQFN3, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-883, Vgs(th) (Max) @ Id: 1.05V @ 250µA, Power Dissipation (Max): 360mW (Ta), 2.7W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 4.5 V, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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PMZ370UNEZ | Hersteller : Nexperia |
MOSFETs 30 V, N-channel Trench MOSFET |
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