PMZ760SN,315 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 1.22A DFN1006-3
Current - Continuous Drain (Id) @ 25°C: 1.22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 300mA, 10V
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Technische Details PMZ760SN,315 Nexperia USA Inc.
Description: MOSFET N-CH 60V 1.22A DFN1006-3, Current - Continuous Drain (Id) @ 25°C: 1.22A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-883, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.5W (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 300mA, 10V.
Weitere Produktangebote PMZ760SN,315
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PMZ760SN,315 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 1.22A DFN1006-3 Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-883 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PMZ760SN,315 | Nexperia |
MOSFET MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PMZ760SN,315 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 1.22A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 1.22A DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMZ760SN,315 |
|
Hersteller: Nexperia
MOSFET MOSFET
MOSFET MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH