PMZ950UPEYL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 500MA DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-883
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 34+ | 0.53 EUR |
| 55+ | 0.32 EUR |
| 76+ | 0.23 EUR |
| 100+ | 0.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PMZ950UPEYL Nexperia USA Inc.
Description: MOSFET P-CH 20V 500MA DFN1006-3, Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Part Status: Active, Supplier Device Package: SOT-883, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 360mW (Ta), 2.7W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR).
Weitere Produktangebote PMZ950UPEYL nach Preis ab 0.076 EUR bis 0.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMZ950UPEYL | Hersteller : Nexperia |
MOSFETs PMZ950UPE/SOT883/XQFN3 |
auf Bestellung 2904 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
PMZ950UPEYL | Hersteller : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 500MA DFN1006-3 Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: SOT-883 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
|||||||||||||||||
| PMZ950UPEYL | Hersteller : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.3A Pulsed drain current: -2A Case: DFN1006-3; SOT883 Gate-source voltage: ±8V On-state resistance: 2.1Ω Mounting: SMD Gate charge: 2.1nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Technology: Trench |
Produkt ist nicht verfügbar |