PMZB290UNE,315 Nexperia

Description: MOSFET N-CH 20V 1A DFN1006B-3, Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.68 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Obsolete, Supplier Device Package: DFN1006B-3, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 360mW (Ta), 2.7W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).