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PMZB550UNEYL

PMZB550UNEYL Nexperia USA Inc.

PMZB550UNE.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 590MA DFN1006B-3
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
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Lieferzeit 10-14 Tag (e)
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Technische Details PMZB550UNEYL Nexperia USA Inc.

Description: MOSFET N-CH 30V 590MA DFN1006B-3, Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: DFN1006B-3, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 310mW (Ta), 1.67W (Tc), Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V.

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PMZB550UNEYL PMZB550UNEYL Nexperia USA Inc. PMZB550UNE.pdf Description: MOSFET N-CH 30V 590MA DFN1006B-3
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PMZB550UNEYL PMZB550UNEYL Nexperia PMZB550UNE.pdf MOSFETs SOT883 N-CH 30V .59A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PMZB550UNEYL PMZB550UNE.pdf
PMZB550UNEYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 590MA DFN1006B-3
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006B-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PMZB550UNEYL PMZB550UNE.pdf
PMZB550UNEYL
Hersteller: Nexperia
MOSFETs SOT883 N-CH 30V .59A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH