PN2222A APP TIN/LEAD Central Semiconductor
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Technische Details PN2222A APP TIN/LEAD Central Semiconductor
Description: 40V 800MA 625MW TH TRANSISTOR-SM, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 625 mW.
Weitere Produktangebote PN2222A APP TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| PN2222A APP TIN/LEAD | Hersteller : Central Semiconductor Corp |
Description: 40V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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PN2222A APP TIN/LEAD | Hersteller : Central Semiconductor |
 Bipolar Transistors - BJT NPN 75Vcbo 40Vceo 6.0Vebo 800mA 625mW |
Produkt ist nicht verfügbar |