Technische Details PN2369
Description: TRANS NPN 15V 0.2A TO-92-3, Power - Max: 350 mW, Voltage - Collector Emitter Breakdown (Max): 15 V, Current - Collector (Ic) (Max): 200 mA, Supplier Device Package: TO-92-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V, Current - Collector Cutoff (Max): 400nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bulk.
Weitere Produktangebote PN2369
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
PN2369 | onsemi |
Description: TRANS NPN 15V 0.2A TO-92-3Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 15 V Current - Collector (Ic) (Max): 200 mA Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Current - Collector Cutoff (Max): 400nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
PN2369 | onsemi |
Bipolar Transistors - BJT Switching Transistor NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PN2369 |
![]() |
Hersteller: onsemi
Description: TRANS NPN 15V 0.2A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Current - Collector Cutoff (Max): 400nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS NPN 15V 0.2A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Current - Collector Cutoff (Max): 400nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PN2369 |
![]() |
Hersteller: onsemi
Bipolar Transistors - BJT Switching Transistor NPN
Bipolar Transistors - BJT Switching Transistor NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



