auf Bestellung 7824 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 61+ | 0.86 EUR |
| 83+ | 0.63 EUR |
| 145+ | 0.36 EUR |
| 500+ | 0.24 EUR |
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Technische Details PQMD13Z Nexperia
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 350mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Frequency - Transition: 230MHz, 180MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: DFN1010B-6.
Weitere Produktangebote PQMD13Z
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| PQMD13Z | Hersteller : NEXPERIA |
 Description: NEXPERIA - PQMD13Z - INTEGRATED PASSIVE FILTERStariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 77550 Stücke: Lieferzeit 14-21 Tag (e) |
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PQMD13Z | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 230MHz, 180MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: DFN1010B-6 |
Produkt ist nicht verfügbar |
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PQMD13Z | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 230MHz, 180MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: DFN1010B-6 |
Produkt ist nicht verfügbar |