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PQMD13Z

PQMD13Z Nexperia

PQMD13.pdf
Hersteller: Nexperia
Bipolar Transistors - BJT SOT1216 50V .1A NPN/PNP RET
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Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+0.5 EUR
10+0.46 EUR
1000+0.38 EUR
2500+0.33 EUR
5000+0.11 EUR
10000+0.076 EUR
25000+0.069 EUR
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Technische Details PQMD13Z Nexperia

Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN, Supplier Device Package: DFN1010B-6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 4.7kOhms, Frequency - Transition: 230MHz, 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 350mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Qualification: AEC-Q101, Grade: Automotive, Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Tape & Reel (TR).

Weitere Produktangebote PQMD13Z

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
PQMD13Z PQMD13Z Nexperia USA Inc. PQMD13.pdf Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 230MHz, 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PQMD13Z PQMD13Z Nexperia USA Inc. PQMD13.pdf Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 230MHz, 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PQMD13Z PQMD13.pdf
PQMD13Z
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 230MHz, 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PQMD13Z PQMD13.pdf
PQMD13Z
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Supplier Device Package: DFN1010B-6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 230MHz, 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 350mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH