| Anzahl | Preis |
|---|---|
| 6+ | 0.54 EUR |
| 10+ | 0.4 EUR |
| 100+ | 0.23 EUR |
| 1000+ | 0.12 EUR |
| 5000+ | 0.092 EUR |
| 10000+ | 0.079 EUR |
| 25000+ | 0.07 EUR |
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Technische Details PQMD16Z Nexperia
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN, Power - Max: 350mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: DFN1010B-6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 22kOhms, Frequency - Transition: 230MHz, 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA.
Weitere Produktangebote PQMD16Z
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PQMD16Z | Hersteller : Nexperia USA Inc. |
 Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFNPower - Max: 350mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: DFN1010B-6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 230MHz, 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA |
Produkt ist nicht verfügbar |
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PQMD16Z | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Frequency - Transition: 230MHz, 180MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: DFN1010B-6 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |