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PRMH13Z Nexperia


PRMH13.pdf
Hersteller: Nexperia
Bipolar Transistors - BJT SOT1268 50V .1A NPN/NPN RET
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+0.41 EUR
12+0.25 EUR
100+0.11 EUR
1000+0.074 EUR
5000+0.055 EUR
Mindestbestellmenge: 7 Stücke
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Technische Details PRMH13Z Nexperia

Description: TRANS PREBIAS 2NPN 50V DFN1412-6, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 480mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Frequency - Transition: 230MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: DFN1412-6, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PRMH13Z nach Preis ab 0.11 EUR bis 0.44 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
PRMH13Z PRMH13Z Nexperia USA Inc. PRMH13.pdf Description: TRANS PREBIAS 2NPN 50V DFN1412-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 480mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1412-6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
67+0.27 EUR
157+0.11 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PRMH13Z PRMH13.pdf
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V DFN1412-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 480mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1412-6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
40+0.44 EUR
67+0.27 EUR
157+0.11 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH