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PS140M-D32_R1_00301

PS140M-D32_R1_00301 Panjit

EE35F52ED4BF1536ECF95B6A56CEE82CDD05C9F1D4020A903741FDAEEC6760EE.pdf
Hersteller: Panjit
ESD Protection Diodes / TVS Diodes Low Capacitance ESD Protection
auf Bestellung 9290 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
1000+0.12 EUR
2500+0.1 EUR
5000+0.096 EUR
Mindestbestellmenge: 7 Stücke
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Technische Details PS140M-D32_R1_00301 Panjit

Category: Protection diodes - arrays, Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1, Mounting: SMD, Breakdown voltage: 25.5V, Max. forward impulse current: 10A, Max. off-state voltage: 24V, Semiconductor structure: bidirectional, Leakage current: 0.5µA, Case: DFN2, Capacitance: 0.5pF, Type of diode: TVS, Number of channels: 1.

Weitere Produktangebote PS140M-D32_R1_00301

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PS140M-D32_R1_00301 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 25.5V
Max. forward impulse current: 10A
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.5pF
Type of diode: TVS
Number of channels: 1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS140M-D32_R1_00301
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 25.5V
Max. forward impulse current: 10A
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.5pF
Type of diode: TVS
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH