auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 2.44 EUR |
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Technische Details PSC1065KQ Nexperia
Description: DIODE SIL CARBIDE 650V 10A TO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 340pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote PSC1065KQ nach Preis ab 2.06 EUR bis 6.79 EUR
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PSC1065KQ | Hersteller : Nexperia |
 Diode Schottky SiC 650V 10A 2-Pin(2+Tab) TO-220 |
auf Bestellung 48850 Stücke: Lieferzeit 14-21 Tag (e) |
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PSC1065KQ | Hersteller : NEXPERIA |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 120uA Mounting: THT Case: TO220-2 Max. off-state voltage: 650V Max. forward voltage: 2.6V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 42A Leakage current: 120µA Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 89 Stücke: Lieferzeit 7-14 Tag (e) |
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PSC1065KQ | Hersteller : NEXPERIA |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 120uA Mounting: THT Case: TO220-2 Max. off-state voltage: 650V Max. forward voltage: 2.6V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 42A Leakage current: 120µA Kind of package: tube Type of diode: Schottky rectifying Technology: SiC |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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PSC1065KQ | Hersteller : Nexperia |
SiC Schottky Diodes 650 V, 16 A SiC Schottky diode in D2PAK R2P |
auf Bestellung 921 Stücke: Lieferzeit 10-14 Tag (e) |
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PSC1065KQ | Hersteller : Nexperia USA Inc. |
Description: DIODE SIL CARBIDE 650V 10A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 340pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
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