PSC1065KQ NEXPERIA
Hersteller: NEXPERIACategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Max. off-state voltage: 650V
Max. forward voltage: 2.6V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 42A
Leakage current: 120µA
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220-2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 96 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 4.08 EUR |
| 19+ | 3.9 EUR |
| 23+ | 3.22 EUR |
| 24+ | 3.05 EUR |
| 1000+ | 2.93 EUR |
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Technische Details PSC1065KQ NEXPERIA
Description: PSC1065K/SOT8021/TO220-2L, Packaging: Tape & Reel (TR), Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 340pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote PSC1065KQ nach Preis ab 3.05 EUR bis 7.8 EUR
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PSC1065KQ | Hersteller : NEXPERIA |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube Max. off-state voltage: 650V Max. forward voltage: 2.6V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 42A Leakage current: 120µA Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO220-2 |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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PSC1065KQ | Hersteller : Nexperia |
Schottky Diodes & Rectifiers PSC1065K/SOT8021/TO220-2L |
auf Bestellung 965 Stücke: Lieferzeit 14-28 Tag (e) |
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| PSC1065KQ | Hersteller : Nexperia USA Inc. |
Description: PSC1065K/SOT8021/TO220-2L Packaging: Tape & Reel (TR) Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 340pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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