Produktrezensionen
Produktbewertung abgeben
Technische Details PSC1065KQ Nexperia
Description: DIODE SIL CARBIDE 650V 10A TO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 340pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote PSC1065KQ nach Preis ab 2.45 EUR bis 7.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PSC1065KQ | NEXPERIA |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 120uA Mounting: THT Case: TO220-2 Max. forward voltage: 2.6V Technology: SiC Max. off-state voltage: 650V Load current: 10A Kind of package: tube Semiconductor structure: single diode Leakage current: 120µA Type of diode: Schottky rectifying Max. forward impulse current: 42A |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
PSC1065KQ | Nexperia |
Diode Schottky SiC 650V 10A 2-Pin(2+Tab) TO-220 |
auf Bestellung 49799 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
PSC1065KQ | Nexperia |
SiC Schottky Diodes PSC1065K/SOT8021/TO220-2L |
auf Bestellung 870 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
PSC1065KQ | Nexperia USA Inc. |
Description: DIODE SIL CARBIDE 650V 10A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 340pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PSC1065KQ |
|
Hersteller: NEXPERIA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 120uA
Mounting: THT
Case: TO220-2
Max. forward voltage: 2.6V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 120µA
Type of diode: Schottky rectifying
Max. forward impulse current: 42A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 120uA
Mounting: THT
Case: TO220-2
Max. forward voltage: 2.6V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 120µA
Type of diode: Schottky rectifying
Max. forward impulse current: 42A
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 4.34 EUR |
| 21+ | 4.19 EUR |
| PSC1065KQ |
|
Hersteller: Nexperia
Diode Schottky SiC 650V 10A 2-Pin(2+Tab) TO-220
Diode Schottky SiC 650V 10A 2-Pin(2+Tab) TO-220
auf Bestellung 49799 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 130+ | 5.05 EUR |
| 500+ | 4.71 EUR |
| 1000+ | 4.34 EUR |
| 10000+ | 4 EUR |
| PSC1065KQ |
|
Hersteller: Nexperia
SiC Schottky Diodes PSC1065K/SOT8021/TO220-2L
SiC Schottky Diodes PSC1065K/SOT8021/TO220-2L
auf Bestellung 870 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.06 EUR |
| 10+ | 4.63 EUR |
| 100+ | 3.22 EUR |
| 500+ | 2.64 EUR |
| 1000+ | 2.45 EUR |
| PSC1065KQ |
|
Hersteller: Nexperia USA Inc.
Description: DIODE SIL CARBIDE 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.2 EUR |
| 10+ | 4.7 EUR |
| 100+ | 3.28 EUR |
| 500+ | 2.69 EUR |
| 1000+ | 2.49 EUR |